Thin films of gallium oxide (Ga2O3) and gallium nitride (GaN) are prepared by sputter-deposition in the reactive modus. In dependence on substrate temperature and other process parameters, these films are amorphous or nano-crystalline. Gallium oxide is used for applications in sensor devices as, e. g., gas sensors. Gallium nitride films, which are well known from opto-electronic devices, can be deposited at temperatures as low as 500 Kelvin as nano-crystallite films – see also the link to aluminium nitride. For this reason, temperature-sensitive substrate materials can be coated by the above gallium compounds.
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