Highly c-axis oriented (textured) Aluminum Nitride (AlN) Films

Micro-crystalline films of aluminum nitride show strong piezo-electric behavior. For this purpose, a specific orientation of the crystallites is generated during the growth of the films – the so-called c-axis orientation. Choosing a convenient set of parameters of the sputter-deposition process, completely c-axis oriented films of AlN are grown at temperatures as low as 550 Kelvin. These AlN films are of superior quality for the production of sensors or electronic devices as the SAW (surface acoustic wave) –devices. Below there is a selection of crystallographic and optical properties of these aluminum nitride films. Wide angle X-ray scattering (WAXS) patterns of AlN films deposited by sputtering under variation of parameter X. Optical transmisson spectrum of an AlN film of a thickness of about 2 µm Optical band-gap of the above microcrystalline AlN film determined by the procedure after TAUC